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SGM2306A - N-Channel MOSFET

General Description

The SGM2306A utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.

The SGM2306A is universally used for all commercialindustrial surface mount applications.

Key Features

  • Lower On-Resistance.
  • Capable Of 2.5V Gate drive D G S SOT-89 REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5° TYP. 0.70 REF. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS @4.5V Continuous Drain Current,3 VGS @4.5V Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Fact.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SGM2306A 5A, 30V,RDS(ON) 35m N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The SGM2306A utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SGM2306A is universally used for all commercialindustrial surface mount applications. Features * Lower On-Resistance * Capable Of 2.5V Gate drive D G S SOT-89 REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5° TYP. 0.70 REF. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS @4.