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SGM2310 Datasheet N-channel MOSFET

Manufacturer: SeCoS Halbleitertechnologie GmbH

Overview: Elektronische Bauelemente SGM2310 3A, 60V,RDS(ON) 90m N-Channel Enhancement Mode Power Mos.

General Description

SOT-89 The SGM2310 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.The SGM2310 is universally used for all mercial-industrial applications.

Key Features

  • Small Package Outline.
  • Simple Drive Requirement D G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,3VGS@4.5V Continuous Drain Current,3VGS@4.5V Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52.

More Datasheets from SeCoS Halbleitertechnologie GmbH

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SGM2306 N-Channel MOSFET
SGM2306A N-Channel MOSFET
SGM2308 N-Channel MOSFET
SGM0410 N-Channel Enhancement Mode Power MOSFET
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SGM2310 Distributor