The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Elektronische Bauelemente
SGM2310
3A, 60V,RDS(ON) 90m N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
Description
SOT-89
The SGM2310 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.The SGM2310 is
universally used for all commercial-industrial applications.
Features
* Small Package Outline * Simple Drive Requirement
D
G
S
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,3VGS@4.5V Continuous Drain Current,3VGS@4.5V Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range
REF.
A B C D E F
Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.