SGM2310A Datasheet | SeCoS Halbleitertechnologie GmbH

Elektronische Bauelemente 5 A, 60 V, RDS(ON) 115 mΩ N-Channel Enhancement Mode Power MOSFET RoHS pliant Product A suffix of “-C” specifies halogen & lead-free SOT-89 DESCRIPTION The SGM2310A utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SGM2310A is universally used for all mercial-industrial applications. Features Simple drive requirement Super high density cell design for extremely low RDS(ON) MARKING Top View C B KL E D F GH REF. A B C D E F Millimeter Min. Max. 4.40 4.60 4.05 4.25 2.40 2.60 1.40 1.60 3.00 REF. 0.40 0.52 REF. G H J K L Millimeter...