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SGM2301 Datasheet P-channel MOSFET

Manufacturer: SeCoS Halbleitertechnologie GmbH

Overview: Elektronische Bauelemente SGM2301 -2.6A, -20V,RDS(ON) 130m P-Channel Enhancement Mode Power Mos.

General Description

The SGM2301 provides the designer with the best bination of fast switching, low on-resistance and cost-effectiveness.

The SGM2301 is universally preferred for all mercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.

Key Features

  • Surface Mount Device.
  • Simple Drive Requirement D G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range SOT-89 REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60.

More Datasheets from SeCoS Halbleitertechnologie GmbH

Part Number Description
SGM2305A P-Channel MOSFET
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SGM2306A N-Channel MOSFET
SGM2308 N-Channel MOSFET
SGM2310 N-Channel MOSFET
SGM2310A N-Channel MOSFET
SGM2310B N-Channel MOSFET
SGM0410 N-Channel Enhancement Mode Power MOSFET
SGM0410-C N-Channel Enhancement Mode Power MOSFET
SGM0410S N-Channel Enhancement Mode Power MOSFET

SGM2301 Distributor