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SGM2301 - P-Channel MOSFET

General Description

The SGM2301 provides the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.

The SGM2301 is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.

Key Features

  • Surface Mount Device.
  • Simple Drive Requirement D G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range SOT-89 REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SGM2301 -2.6A, -20V,RDS(ON) 130m P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The SGM2301 provides the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The SGM2301 is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Features * Surface Mount Device * Simple Drive Requirement D G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range SOT-89 REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.