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SGM2308 - N-Channel MOSFET

General Description

The SGM2308 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.

The SGM2308 is universally used for all commercialindustrial surface mount applications.

Key Features

  • Simple Drive Requirement.
  • Small Package Outline D G S SOT-89 REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5° TYP. 0.70 REF. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS @4.5V Continuous Drain Current,3 VGS @4.5V Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Fact.

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Other Datasheets by SeCoS Halbleitertechnologie GmbH

Part Number Description
SGM2301 P-Channel MOSFET
SGM2305A P-Channel MOSFET
SGM2306 N-Channel MOSFET
SGM2306A N-Channel MOSFET
SGM2310 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SGM2308 3A, 60V,RDS(ON) 160m N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The SGM2308 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SGM2308 is universally used for all commercialindustrial surface mount applications. Features * Simple Drive Requirement * Small Package Outline D G S SOT-89 REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5° TYP. 0.70 REF. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS @4.