Datasheet4U Logo Datasheet4U.com

SGM2310 - N-Channel MOSFET

Description

universally used for all commercial-industrial applications.

Features

  • Small Package Outline.
  • Simple Drive Requirement D G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,3VGS@4.5V Continuous Drain Current,3VGS@4.5V Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52.

📥 Download Datasheet

Datasheet Details

Part number SGM2310
Manufacturer SeCoS
File Size 483.11 KB
Description N-Channel MOSFET
Datasheet download datasheet SGM2310 Datasheet

📁 Similar Datasheet

  • SGM2300 - High Voltage Regulators (Shengbang Microelectronics)
  • SGM2324 - General Purpose CMOS Operational Amplifier (Shengbang Microelectronics)
  • SGM2358 - General Purpose CMOS Operational Amplifier (Shengbang Microelectronics)
  • SGM20 - compact physical dimensions (Sumitiomo)
  • SGM2005 - Linear Regulators (Shengbang Microelectronics)
  • SGM2006 - RF-Linear Regulators (Shengbang Microelectronics)
  • SGM2006A - RF-Linear Regulators (Shengbang Microelectronics)
  • SGM2007 - Linear Regulators (Shengbang Microelectronics)
  • SGM2007A - Linear Regulators (Shengbang Microelectronics)
  • SGM2008 - Linear Regulators (Shengbang Microelectronics)
Other Datasheets by SeCoS

Full PDF Text Transcription

Click to expand full text
Elektronische Bauelemente SGM2310 3A, 60V,RDS(ON) 90m N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description SOT-89 The SGM2310 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.The SGM2310 is universally used for all commercial-industrial applications. Features * Small Package Outline * Simple Drive Requirement D G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,3VGS@4.5V Continuous Drain Current,3VGS@4.5V Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.
Published: |