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SID04N65SL - N-Ch Enhancement Mode Power MOSFET

General Description

The SID04N65SL is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications .

Key Features

  • Advanced high cell density Trench technology.
  • Super Low Gate Charge.
  • Excellent CdV/dt effect decline.
  • 100% EAS Guaranteed.
  • Green Device Available A BC D  Gate GE  Drain.
  •  Source K F H MJ P REF. A B C D E F Millimeter Min. Max. 6.35 6.80 4.90 5.50 2.15 2.40 0.45 0.90 6.50 7.50 7.20 9.65 REF. G H J K M P Millimeter Min. Max. 5.40 6.25 0.85 1.50 2.30 0.60 1.05 0.50 0.90 0.45 0.62.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SID04N65SL 4A , 650V , RDS(ON) 2.7Ω N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SID04N65SL is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications . TO-251 FEATURES  Advanced high cell density Trench technology  Super Low Gate Charge  Excellent CdV/dt effect decline  100% EAS Guaranteed  Green Device Available A BC D  Gate GE  Drain  Source K F H MJ P REF. A B C D E F Millimeter Min. Max. 6.35 6.80 4.90 5.50 2.15 2.40 0.45 0.90 6.50 7.50 7.20 9.65 REF. G H J K M P Millimeter Min. Max. 5.40 6.25 0.85 1.50 2.30 0.60 1.05 0.50 0.90 0.45 0.