SID04N60-C
DESCRIPTION
This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications such as power suppliers, converters, power motor control, and bridge circuits.
FEATURES
High Current Rating Lower RDS(ON) Lower Capacitance Lower Total Gate Charge Tighter VSD Specifications Avalanche Energy Specified
MARKING
04N60
Date Code
ORDER INFORMATION
Part Number
Type
Lead (Pb)-free and Halogen-free
TO-251
REF.
A B C D E F
Millimeter Min. Max. 6.35 6.80 4.90 5.50 2.15 2.40 0.43 0.90 6.50 7.50 7.20 9.65
REF.
G H J K M P
Drain
Millimeter Min. Max. 5.40 6.25 0.85 1.50
2.30 Typ. 0.60 1.05 0.50 0.90 0.43 0.62
Gate
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage Continuous...
