SID04N65SL
DESCRIPTION
The SID04N65SL is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications .
TO-251
FEATURES
- Advanced high cell density Trench technology
- Super Low Gate Charge
- Excellent Cd V/dt effect decline
- 100% EAS Guaranteed
- Green Device Available
A BC
Gate
Drain
-
Source
REF.
A B C D E F
Millimeter
Min. Max.
6.35 6.80 4.90 5.50 2.15 2.40 0.45 0.90 6.50 7.50 7.20 9.65
REF.
G H J K M P
Millimeter
Min. Max.
5.40 6.25 0.85 1.50
2.30 0.60 1.05 0.50 0.90 0.45 0.62
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Rating
Drain-Source Voltage
VDS 650
Gate-Source Voltage
VGS ±30
Continuous Drain Current
TC=25°C...
