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SMG2325P - P-Channel MosFET

Description

These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation.

Features

  • Low RDS(on) provides higher efficiency and extends battery life.
  • Low thermal impedance copper leadframe SC-59 saves board Space.
  • Fast switching speed.
  • High performance trench technology.

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Datasheet preview – SMG2325P

Datasheet Details

Part number SMG2325P
Manufacturer SeCoS
File Size 623.55 KB
Description P-Channel MosFET
Datasheet download datasheet SMG2325P Datasheet
Additional preview pages of the SMG2325P datasheet.

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Full PDF Text Transcription

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Elektronische Bauelemente SMG2325P -3.6 A, -20 V, RDS(ON) 55 m P-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printer , PCMCIA cards, cellular and cordless telephones. FEATURES  Low RDS(on) provides higher efficiency and extends battery life.  Low thermal impedance copper leadframe SC-59 saves board Space.  Fast switching speed.  High performance trench technology.
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