SMG2325 Description
The SMG2325 is the N-Channel logic enhancement mode power filed effect transistors are produced using high Cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state Resistance.
| Part number | SMG2325 |
|---|---|
| Download | SMG2325 Datasheet (PDF) |
| File Size | 384.78 KB |
| Manufacturer | SeCoS Halbleitertechnologie GmbH |
| Description | N-Channel MosFET |
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| Part Number | Description |
|---|---|
| SMG2325P | P-Channel MosFET |
| SMG2321P | P-Channel MosFET |
| SMG2322N | N-Channel MosFET |
| SMG2326N | N-Channel MosFET |
| SMG2327P | P-Channel MosFET |
The SMG2325 is the N-Channel logic enhancement mode power filed effect transistors are produced using high Cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state Resistance.