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SMG3018K Datasheet N-Channel MOSFET

Manufacturer: SeCoS Halbleitertechnologie GmbH

General Description

The SMG3018K utilized advanced processing techniques to achieve the lowest possible onresistance, extremely efficient and costeffectiveness device.

The SMG3018K is universally used for all commercial-industrial applications.

A L 3 Top View SC-59 Dim A B 1 Min 2.70 1.40 1.00 0.35 1.70 0.00 0.10 0.20 0.85 2.40 Max 3.10 1.60 1.30 0.50 2.10 0.10 0.26 0.60 1.15 2.80 S 2 B C D G H J K D G

Overview

SMG3018K Elektronische Bauelemente 640mA, 30V,RDS(ON)8£[ N-Channel Enhancement Mode Power Mos.

Key Features

  • RoHS Compliant.
  • Simple Drive Requirement.
  • Small Package Outline H Drain Gate Source C J K L S All Dimension in mm Marking : 3018E D G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1,2 3 3 Symbol VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C o o o Ratings 30 ± 20 640 500 950 1.38 0.01 Unit V V mA mA mA W W / oC o Total Power Dissipation Linear Derating Factor Operatin.