Datasheet4U Logo Datasheet4U.com

SMG3314 - P-Channel MOSFET

General Description

The SMG3314 provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.

Key Features

  • Ultrahigh-Speed Switching.
  • 4V Drive.
  • Low On-Resistance Gate Source H J K H Drain L S D All Dimension in mm Marking : 3314 G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg 3 3 Symbol VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C o o o Ratings -30 ±20 -1.9 -1.5 -10 1.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SMG3314 Elektronische Bauelemente -1.9A, -30V,RDS(ON) 240m£[ P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product A Description The SMG3314 provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. S 2 L SC-59 Dim Min 2.70 1.40 1.00 0.35 1.70 0.00 0.10 0.20 0.85 2.40 Max 3.10 1.60 1.30 0.50 2.10 0.10 0.26 0.60 1.15 2.