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SMS123Y-C Datasheet Preview

SMS123Y-C Datasheet

N-Channel MOSFET

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Elektronische Bauelemente
SMS123Y-C
0.2A, 100V, RDS(ON) 5
N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A Suffix of “-C” specifies halogen & lead-free
DESCRIPTIONS
The SMS123Y-C is N-Channel Enhancement MOS
Field Effect Transistor. Uses advanced trench technology
and design to provide excellent RDS(ON) with low gate charge.
This device is suitable for use in DC-DC conversion,
load switch and level shift.
MECHANICAL DATA
Trench Technology
Excellent on Resistance
Extremely Low Threshold Voltage
APPLICATION
DC-DC Converter Circuit
Load Switch
Power MOSFET Gate Drivers
MARKING
B123.
PACKAGE INFORMATION
Package
MPQ
SOT-23
3K
Leader Size
7 inch
ORDER INFORMATION
Part Number
Type
SMS123Y-C
Lead (Pb)-free and Halogen-free
SOT-23
A
L
3
Top View
CB
1
1
2
K
E
D
F
G
H
3
2
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.10 2.65
1.20 1.40
0.89 1.17
1.78 2.04
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.09 0.18
0.35 0.65
0.08 0.20
0.6 REF.
0.95 BSC.
MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
Pulsed Drain Current 1
TA=25°C
ID
TA=70°C
IDM
Power Dissipation
PD
Thermal Resistance from Junction-Ambient 2
RθJA
Operating Junction & Storage Temperature Range
TJ, TSTG
Notes:
1. Pulse Test: Pulse width300µs, duty cycle2%
2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch.
Rating
100
±20
0.2
0.16
0.8
350
357
150, -55~150
Unit
V
V
A
A
mW
°C/W
°C
http://www.SeCoSGmbH.com/
16-Jun-2020 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 4




SeCoS

SMS123Y-C Datasheet Preview

SMS123Y-C Datasheet

N-Channel MOSFET

No Preview Available !

Elektronische Bauelemente
SMS123Y-C
0.2A, 100V, RDS(ON) 5
N-Ch Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified)
Parameter
Symbol Min.
Typ.
Drain-Source Breakdown Voltage
V(BR)DSS
100
-
Zero Gate Voltage Drain Current
IDSS
-
-
Gate-Source Leakage
-
-
IGSS
-
Gate-Threshold Voltage
VGS(th)
1
1.8
Drain-Source On Resistance
-
3
RDS(ON)
-
3.5
Diode Forward On Voltage
VSD
-
-
Total Gate Charge
Qg
-
1.8
Gate-Source Charge
Qgs
-
0.25
Gate-Drain Charge
Qgd
-
0.51
Turn-on Delay Time
Td(on)
-
1.7
Rise Time
Tr
-
9
Turn-off Delay Time
Td(off)
-
17
Fall Time
Tf
-
7
Input Capacitance
Ciss
-
14
Output Capacitance
Coss
-
10
Reverse Transfer Capacitance
Crss
-
5
Max.
-
1
±50
±100
2.5
5
5.5
1.2
2.5
-
-
-
-
-
-
-
-
-
Unit
V
µA
nA
V
V
Test Conditions
VGS=0V, ID=250µA
VDS=100V, VGS=0V
VDS=0V, VGS= ±10V
VDS=0V, VGS= ±20V
VDS=VGS, ID=250µA
VGS=10V, ID=0.2A
VGS=4.5V, ID=0.175A
IS=0.2A, VGS=0V
VDS=50V
nC VGS=10V
ID=0.2A
VDD=50V
nS
ID=0.2A
VGS=10V
RGEN=6
VDS=50V
pF VGS=0V
f=1MHz
http://www.SeCoSGmbH.com/
16-Jun-2020 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 4



Part Number SMS123Y-C
Description N-Channel MOSFET
Maker SeCoS
Total Page 3 Pages
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