Datasheet Summary
Elektronische Bauelemente
0.2A, 100V, RDS(ON) 5Ω N-Ch Enhancement Mode Power MOSFET
RoHS pliant Product A Suffix of “-C” specifies halogen & lead-free
DESCRIPTIONS
The SMS123Y-C is N-Channel Enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
This device is suitable for use in DC-DC conversion, load switch and level shift.
MECHANICAL DATA
Trench Technology Excellent on Resistance Extremely Low Threshold Voltage
APPLICATION
DC-DC Converter Circuit Load Switch Power MOSFET Gate Drivers
MARKING B123.
PACKAGE INFORMATION
Package
SOT-23
3K
Leader Size 7 inch
ORDER INFORMATION
Part...