SMS123 Datasheet | SeCoS Halbleitertechnologie GmbH

Elektronische Bauelemente 0.17A, 100V, RDS(ON) 6Ω N-Ch Enhancement Mode Power MOSFET RoHS pliant Product A Suffix of “-C” specifies halogen & lead-free DESCRIPTIONS The SMS123 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)with low gate charge. This device is suitable for use in DC-DC conversion, load switch and level shift. MECHANICAL DATA Trench Technology Supper high density cell design Excellent ON resistance Extremely Low Threshold Voltage APPLICATION DC-DC converter circuit Load Switch MARKING B123 PACKAGE INFORMATION Package SOT-23 3K Leader Size 7 inch SOT-23 Top...