SMS123Y-C datasheet by SeCoS Halbleitertechnologie GmbH.
| Part number | SMS123Y-C |
|---|---|
| Datasheet | SMS123Y-C-SeCoS.pdf |
| File Size | 389.62 KB |
| Manufacturer | SeCoS Halbleitertechnologie GmbH |
| Description | N-Channel MOSFET |
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Elektronische Bauelemente SMS123Y-C 0.2A, 100V, RDS(ON) 5Ω N-Ch Enhancement Mode Power MOSFET RoHS pliant Product A Suffix of “-C” specifies halogen & lead-free DESCRIPTIONS The SMS123Y-C is N-Channel Enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion, load switch and level shift.
View all SeCoS Halbleitertechnologie GmbH datasheets
| Part Number | Description |
|---|---|
| SMS123 | N-Channel MOSFET |
| SMS2001-C | P-Channel MOSFET |
| SMS2002-C | N-Ch Enhancement Mode Power MOSFET |
| SMS2009E-C | N-Channel MOSFET |
| SMS2012-C | N-Ch Enhancement Mode Power MOSFET |
| SMS2301 | P-Channel Enhancement Mode Power MOSFET |
| SMS2301-C | P-Channel Enhancement Mode Power MOSFET |
| SMS2301Y-C | P-Channel Enhancement Mode Power MOSFET |
| SMS2303-C | P-Channel Enhancement Mode Power MOSFET |
| SMS2305R | P-Channel MOSFET |
