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SMS2001-C Datasheet Preview

SMS2001-C Datasheet

P-Channel MOSFET

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Elektronische Bauelemente
SMS2001-C
-2A, -20V, RDS(O ) 200mΩ
P-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SMS2001-C is the highest performance trench
P-Ch MOSFETs with extreme high cell density, which
provide excellent RDS(ON) and gate charge for most of
the small power switching and load switch applications.
The SMS2001-C meet the RoHS and Green Product
requirement with full function reliability approved.
K
FEATURES
Advanced High Cell Density Trench Technology
Super Low Gate Charge
F
SOT-23
A
L
3
Top View
CB
1
1
2
E
D
G
H
3
2
J
MARKING
2001
PACKAGE INFORMATION
Package
MPQ
SOT-23
3K
Leader Size
7 inch
ORDER INFORMATION
Part Number
Type
SMS2001-C
Lead (Pb)-free and Halogen-free
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.10 2.95
1.20 1.7
0.89 1.3
1.70 2.3
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0
0.18
0.55 REF.
0.08 0.20
0.6 REF.
0.95 BSC.
1
3
2
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current, @VGS= -4.5V 1 TA=25°C
ID
TA=70°C
Pulsed Drain Current 3
IDM
Power Dissipation
TA=25°C
PD
Operating Junction & Storage Temperature
TJ, TSTG
Thermal Resistance Ratings
Thermal Resistance Junction-ambient 1
RθJA
Thermal Resistance Junction-ambient 2
Ratings
-20
±8
-2
-1.6
-8
1
-55~150
t5sec, 125
Steady State, 250
415
Unit
V
V
A
A
W
°C
°C/W
http://www.SeCoSGmbH.com/
07-Dec-2017 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 4




SeCoS

SMS2001-C Datasheet Preview

SMS2001-C Datasheet

P-Channel MOSFET

No Preview Available !

Elektronische Bauelemente
SMS2001-C
-2A, -20V, RDS(O ) 200mΩ
P-Channel Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified)
Parameter
Symbol Min.
Typ.
Max.
Drain-Source Breakdown Voltage
BVDSS
-20
-
-
Gate-Threshold Voltage
Forward Tranconductance
VGS(th)
-0.45
-
-1
gfs
-
3.4
-
Gate-Source Leakage Current
IGSS
-
TJ=25°C
-
Drain-Source Leakage Current
IDSS
TJ=55°C
-
Static Drain-Source On-Resistance 3
-
RDS(ON)
-
Total Gate Charge 3
Qg
-
-
±100
-
-1
-
-10
150
200
200
280
4.6
-
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time 3
Qgs
-
0.27
-
Qgd
-
2.34
-
Td(on)
-
11.6
-
Rise Time
Turn-off Delay Time
Tr
-
6.2
-
Td(off)
-
31.8
-
Fall Time
Input Capacitance
Tf
-
2.8
-
Ciss
-
194
-
Output Capacitance
Coss
-
35.5
-
Reverse Transfer Capacitance
Crss
-
28.2
-
Source-Drain Diode
Forward on Voltage 4
Continuous Source Current 1
VSD
-
-0.85
-1.2
IS
-
-
-2
Pulsed Source Current 3
ISM
-
-
-8
Notes:
1. Surface Mounted on 1”x1” FR4 Board with 2OZ copper.
2. When mounted on Min. copper pad.
3. Pulse width limited by maximum junction temperature, Pulse Width≤10µs, Duty Cycle≤1%.
4. Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%.
Unit
V
V
S
nA
Test Conditions
VGS=0, ID= -250µA
VDS=VGS, ID= -250µA
VDS= -5V, ID= -2A
VGS= ±8V
µA VDS= -16V, VGS=0
VGS= -4.5V, ID= -2A
mΩ
VGS= -2.5V, ID= -1.5A
ID= -2A
nC VDS= -20V
VGS= -4.5V
VDS= -12V
nS
VGS= -4.5V
ID= -1A
RG=3.3Ω
VGS=0
pF VDS= -15V
f=1MHz
V
IS= -1A, VGS=0
A
http://www.SeCoSGmbH.com/
07-Dec-2017 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 4



Part Number SMS2001-C
Description P-Channel MOSFET
Maker SeCoS
Total Page 3 Pages
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