SMS2009E-C Datasheet | SeCoS Halbleitertechnologie GmbH

Elektronische Bauelemente 0.8A, 20V, RDS(ON) 350mΩ N-Ch Enhancement Mode Power MOSFET RoHS pliant Product A Suffix of “-C” specifies halogen & lead-free DESCRIPTIONS The SMS2009E-C is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion, load switch and level shift. Features Reliable and Rugged Green Device Available ESD Protection MARKING W28 = Date Code PACKAGE INFORMATION Package SOT-23 3K Leader Size 7 inch SOT-23 Top View D F GH 3 2 REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.10...