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Description | The SMS2012-C is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the small power switching and load switch applications. The SMS2012-C meet the RoHS and Green Product Requirement with full function reliability approved. SOT-23 FEATURES Advanced High Cell Density Trench Technology Super Low Gate Charge G... |
Features |
Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available MARKING 2012 F = Date code PACKAGE INFORMATION Package MPQ SOT-23 3K Leader Size 7 inch ORDER INFORMATION Part Number Type SMS2012-C Lead (Pb)-free and Halogen-free MAXIMUM RATINGS Parameter Symbol Drain-Source Voltage VDS Gate-Sour... |
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