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SMS2012-C SeCoS N-Ch Enhancement Mode Power MOSFET

Title
Description The SMS2012-C is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the small power switching and load switch applications. The SMS2012-C meet the RoHS and Green Product Requirement with full function reliability approved. SOT-23 FEATURES  Advanced High Cell Density Trench Technology  Super Low Gate Charge  G...
Features
 Advanced High Cell Density Trench Technology
 Super Low Gate Charge
 Green Device Available MARKING 2012 F  = Date code PACKAGE INFORMATION Package MPQ SOT-23 3K Leader Size 7 inch ORDER INFORMATION Part Number Type SMS2012-C Lead (Pb)-free and Halogen-free MAXIMUM RATINGS Parameter Symbol Drain-Source Voltage VDS Gate-Sour...

Datasheet PDF File SMS2012-C Datasheet - 602.89KB
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SMS2012-C   SMS2012-C   SMS2012-C  



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