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SMS2P02J-C - P-Channel Enhancement Mode Power MOSFET

Description

The SMS2P02J-C is the highest performance trench P-ch MOSFETs with extreme high cell density, which provide Excellent RDS(ON) and gate charge for most of the small power switching and load switch applications.

Features

  • Advanced High Cell Density Trench Technology.
  • Super low Gate Charge.
  • Green Device Available.

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Datasheet Details

Part number SMS2P02J-C
Manufacturer SeCoS
File Size 172.50 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet SMS2P02J-C Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SMS2P02J-C -2.3A, -20V, RDS(ON) 112mļ— P-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of ā€œ-Cā€ specifies halogen & lead-free DESCRIPTION The SMS2P02J-C is the highest performance trench P-ch MOSFETs with extreme high cell density, which provide Excellent RDS(ON) and gate charge for most of the small power switching and load switch applications. The SMS2P02J-C meet the RoHS and Green Product requirement with full function reliability approved.
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