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SMS3110-C SeCoS N-Ch Enhancement Mode Power MOSFET

Title
Description The SMS3110-C is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the small power switching and load switch applications. The SMS3110-C meet the RoHS and Green Product Requirement with full function reliability approved. SOT-23 A L 3 Top View CB 1 1 2 K E 3 2 FEATURES  Advanced High Cell Density Tren...
Features
 Advanced High Cell Density Trench Technology
 Super Low Gate Charge
 Green Device Available MARKING 3110 D F G H J REF. A B C D E F Millimeter Min. Max. 2.65 3.10 2.10 3.00 1.10 1.80 0 1.40 1.70 2.30 0.28 0.55 REF. G H J K L Millimeter Min. Max. 0 0.18 0.55 REF. 0.05 0.26 0.60 REF. 0.95 TYP. PACKAGE INFORMATION Package...

Datasheet PDF File SMS3110-C Datasheet - 434.22KB
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SMS3110-C   SMS3110-C   SMS3110-C  



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