SMS3110-C Datasheet (PDF) Download
SeCoS Halbleitertechnologie GmbH
SMS3110-C

Description

The SMS3110-C is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the small power switching and load switch applications.

Key Features

  • Advanced High Cell Density Trench Technology
  • Super Low Gate Charge
  • Green Device Available
  • Dimensions in millimeters