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SMS3110-C - N-Ch Enhancement Mode Power MOSFET

General Description

The SMS3110-C is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the small power switching and load switch applications.

Key Features

  • Advanced High Cell Density Trench Technology.
  • Super Low Gate Charge.
  • Green Device Available.

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Datasheet Details

Part number SMS3110-C
Manufacturer SeCoS
File Size 434.22 KB
Description N-Ch Enhancement Mode Power MOSFET
Datasheet download datasheet SMS3110-C Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SMS3110-C 1.2A, 100V, RDS(ON) 310mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free DESCRIPTION The SMS3110-C is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the small power switching and load switch applications. The SMS3110-C meet the RoHS and Green Product Requirement with full function reliability approved. SOT-23 A L 3 Top View CB 1 1 2 K E 3 2 FEATURES  Advanced High Cell Density Trench Technology  Super Low Gate Charge  Green Device Available MARKING 3110 D F G H J REF. A B C D E F Millimeter Min. Max. 2.65 3.10 2.10 3.00 1.10 1.80 0 1.40 1.70 2.30 0.28 0.55 REF.