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SMS318Y-C Datasheet Preview

SMS318Y-C Datasheet

N-Channel MOSFET

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Elektronische Bauelemente
SMS318Y-C
340mA, 50V, RDS(ON) 2.5
N-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SMS318Y-C is the highest performance trench
N-ch MOSFETs with extreme high cell density, which
provide excellent RDS(ON) and gate charge for most of
the small power switching and load switch applications.
The SMS318Y-C meet the RoHS and Green Product
requirement with full function reliability approved.
FEATURES
Advanced High Cell Density Trench Technology
Voltage Controlled Small Signal Switch
Low Input Capacitance
Fast Switching Speed
Low Input / Output Leakage
SOT-23
A
L
3
Top View C B
1
1
2
K
E
D
F
G
H
3
2
J
MARKING
SS.
PACKAGE INFORMATION
Package
MPQ
SOT-23
3K
Leader Size
7 inch
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.80 3.00
2.25 2.55
1.20 1.40
0.90 1.15
1.80 2.00
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0
0.10
0.55 REF
0.80 0.15
0.60 REF.
0.95 TYP.
ORDER INFORMATION
Part Number
Type
SMS318Y-C
Lead (Pb)-free and Halogen-free
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TA=25°C
Continuous Drain Current @VGS=10V
ID
TA=70°C
Pulsed Drain Current 1
IDM
Total Power Dissipation
TA=25°C
PD
Operating Junction & Storage Temperature Range
TJ, TSTG
Thermal Resistance Ratings
Thermal Resistance Junction-Ambient 2
RθJA
Rating
50
±20
340
272
1.5
350
-55~150
Steady State, 357
Unit
V
V
mA
A
mW
°C
°C/W
http://www.SeCoSGmbH.com/
06-Feb-2020 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 3




SeCoS

SMS318Y-C Datasheet Preview

SMS318Y-C Datasheet

N-Channel MOSFET

No Preview Available !

Elektronische Bauelemente
SMS318Y-C
340mA, 50V, RDS(ON) 2.5
N-Channel Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max.
Drain-Source Breakdown Voltage
V(BR)DSS
50
-
-
Gate-Threshold Voltage
VGS(th)
0.8
-
1.6
Gate-Source Leakage Current
-
-
±100
IGSS
-
-
±50
Drain-Source Leakage Current
IDSS
-
-
1
-
Static Drain-Source On-Resistance
RDS(ON)
-
1.1
2.5
1.2
3
Total Gate Charge
Qg
-
1.7
-
Turn-on Delay Time
Td(on)
-
5
-
Turn-off Delay Time
Td(off)
-
17
-
Input Capacitance
Ciss
-
17.5
-
Output Capacitance
Coss
-
11.5
-
Reverse Transfer Capacitance
Crss
-
6.5
-
Source-Drain Diode
Continuous Source Current
IS
-
-
340
Diode Forward Voltage
VSD
-
-
1.2
Reverse Recovery Time
trr
-
30
-
Notes:
1. Pulse Test: Pulse Width300µs, Duty Cycle2%.
2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch.
Unit
V
V
nA
µA
nC
nS
Test Conditions
VGS=0V, ID=250µA
VDS=VGS, ID=250µA
VGS=±20V, VDS=0V
VGS=±10V, VDS=0V
VDS=50V, VGS=0V
VGS=10V, ID=300mA
VGS=4.5V, ID=200mA
VGS=10V, VDS=25V, ID=0.3A
VDD=25V, VGS=10V
RG=6, ID=300mA
VGS=0V
pF VDS=25V
f=1MHz
mA
V
IS=300mA, VGS=0V
nS
VGS=0V, IS=300mA,
VR=25V, dI/dt=100A/µs
http://www.SeCoSGmbH.com/
06-Feb-2020 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 3



Part Number SMS318Y-C
Description N-Channel MOSFET
Maker SeCoS
Total Page 3 Pages
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