SMS3110-C
Overview
The SMS3110-C is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the small power switching and load switch applications. The SMS3110-C meet the RoHS and Green Product Requirement with full function reliability approved.
- Advanced High Cell Density Trench Technology
- Super Low Gate Charge
- Green Device Available MARKING 3110
- F G H J REF. A B C
- E F Millimeter Min. Max.
- 65 3.10
- 10 3.00
- 10 1.80 0
- 70 2.30
- 28 0.55 REF.
