SeCoS Halbleitertechnologie GmbH SMS3110-C
The SMS3110-C is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the small power switching and load switch applications. The SMS3110-C meet the RoHS and Green Product Requirement with full function reliability approved.| Part No. | SMS3110-C |
|---|---|
| Datasheet | SMS3110-C Download |
| Manufacturer |  SeCoS Halbleitertechnologie GmbH |
| Description | N-Ch Enhancement Mode Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
SOT-23 A L 3 Top View CB 1 1 2 K E 3 2FEATURES
● Advanced High Cell Density Trench Technology● Super Low Gate Charge
● Green Device Available MARKING 3110 D F G H J REF. A B C D E F Millimeter Min. Max. 2.65 3.10 2.10 3.00 1.10 1.80 0 1.40 1.70 2.30 0.28 0.55 REF. G H J K L Millimeter Min. Max. 0 0.18 0.55 REF. 0.05 0.26 0.60 REF. 0.95 TYP. PACKAGE INFORMATION Package MPQ SOT-23 3K Leader Size 7 inch ORDER INFORMATION Part Number Type SMS3110-C Lead (Pb)-free and Halogen-free Mounting Pad Layout *Dimensions in millimeters
MAXIMUM RATINGS
Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current @VGS=10V 1 ID TA=70°C Pulsed Drain Current 3 IDM Power Dissipation TA=25°C PD Operating Junction & Storage Temperature Range TJ, TSTG Thermal Resistance Ratings Thermal Resistance from Junction-Ambient 1 RθJA Thermal Resistance from Junction-Ambient 2 Ratings 100 ±20 1.2 1 5 1 -55~150 125 80 Unit V V A A W °C °C/W 20-Dec-2021 Rev. A Any changes of specification will not be informed individually.
