SPR118N06S-C Description
The SPR118N06S-C is the highest performance N-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous rectification applications. The SPR118N06S-C meet the RoHS and Green Product requirement with full function reliability approved.
SPR118N06S-C Key Features
- Green Device Available
- Super Low Gate Charge
- Excellent CdV/dt effect decline
- Advanced high cell density Trench technology
SPR118N06S-C Applications
- Green Device Available