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SPR100N30SG - N-Ch Enhancement Mode Power MOSFET

General Description

The SPR100N30SG is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.

The SPR100N30SG meet the RoHS and Green Product with Function reliability approved.

Key Features

  • RDS(on)≦2.1mΩ @VGS=10V RDS(on)≦3.3mΩ @VGS=4.5V High speed power switching, Logic Level Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested PR-8PP Package.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SPR100 30SG 100A, 30V, RDS(O ) 2.1mΩ -Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SPR100N30SG is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SPR100N30SG meet the RoHS and Green Product with Function reliability approved. PR-8PP FEATURES RDS(on)≦2.1mΩ @VGS=10V RDS(on)≦3.3mΩ @VGS=4.5V High speed power switching, Logic Level Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested PR-8PP Package MARKING 100N30SG Date Code REF. A B C D E F Millimeter Min. Max. 4.9 5.1 5.7 5.9 5.95 6.2 1.27 BSC. 0.35 0.49 0.1 0.2 REF.