SPR25P10-C Datasheet | SeCoS Halbleitertechnologie GmbH

DESCRIPTION The SPR25P10-C is the highest performance trench P-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SPR25P10-C meet the Ro HS and Green Product requirement with full function reliability approved. FEATURES Advanced High Cell Density Trench Technology Super Low Gate Charge MARKING 25P10 = Date code PR-8PP θ e E A d b g PACKAGE INFORMATION Package PR-8PP 3K Leader Size 13 inch ORDER INFORMATION Part Number Type Lead (Pb)-free and Halogen-free ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1, @VGS= -10V Pulsed Drain Current 3 Total Power Dissipation Operating Junction & Storage Temperature Thermal Resistance Junction-Case 1 Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Ambient 2 Symbol TC=25°C TC=100°C ID TA=25°C TA=70°C TC=25°C TJ, TSTG Thermal Resistance...