SPR35N10S-C
SPR35N10S-C is N-Channel Enhancement Mode Power MOSFET manufactured by SeCoS Halbleitertechnologie GmbH.
DESCRIPTION
The SPR35N10S-C is the highest performance trench N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.
The SPR35N10S-C meet the Ro HS and Green Product requirement with full function reliability approved.
FEATURES
Lower Gate Charge Advanced high cell density Trench technology Green Device Available
MARKING
PR-8PP
35N10S
= Date code
PACKAGE INFORMATION
Package
PR-8PP
3K
Leader Size 13 inch
ORDER INFORMATION
Part Number
Type
SPR35N10S-C Lead (Pb)-free and Halogen-free
REF.
A B C D E F
Millimeter
Min. Max.
5.95 6.2
1.27 BSC.
0.35 0.49
REF.
G H I J K L
Millimeter
Min. Max.
0.254 Ref.
4.0...
