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SPR63N10S-C Datasheet Preview

SPR63N10S-C Datasheet

N-Channel MOSFET

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Elektronische Bauelemente
SPR63 10S-C
63A, 100V, RDS(O ) 9.8mΩ
-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SPR63N10S-C is the highest performance
trench N-Ch MOSFETs with extreme high cell density,
which provide excellent RDS(ON) and gate charge for
most of the synchronous buck converter applications.
The SPR63N10S-C meet the RoHS and Green Product
requirement with full function reliability approved.
FEATURES
Lower Gate Charge
Advanced high cell density Trench technology
Green Device Available
MARKING
PR-8PP
63N10S
= Date code
PACKAGE INFORMATION
Package
MPQ
PR-8PP
3K
Leader Size
13 inch
ORDER INFORMATION
Part Number
Type
SPR63N10S-C Lead (Pb)-free and Halogen-free
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
4.9 5.1
5.7 5.9
5.95 6.2
1.27 BSC.
0.35 0.49
0.1 0.2
REF.
G
H
I
J
K
L
Millimeter
Min. Max.
0.8 1.0
0.254 Ref.
4.0 Ref.
3.4 Ref.
0.6 Ref.
1.4 Ref.
SD
SD
SD
GD
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current 1 (Silicon Limited)
Continuous Drain Current 1 (Package Limited)
Pulsed Drain Current 2 4
TC=25°C
TC=100°C
TC=25°C
ID
IDM
Power Dissipation
TC=25°C
PD
Operating Junction & Storage Temperature
Thermal Resistance Junction-Ambient 1
Thermal Resistance Junction-Case 1
TJ, TSTG
Thermal Resistance Ratings
RθJA
RθJC
Ratings
100
±20
63
40
45
160
73.5
-55~150
50
1.7
Unit
V
V
A
A
W
°C
°C/W
http://www.SeCoSGmbH.com/
22-Aug-2019 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 4




SeCoS

SPR63N10S-C Datasheet Preview

SPR63N10S-C Datasheet

N-Channel MOSFET

No Preview Available !

Elektronische Bauelemente
SPR63 10S-C
63A, 100V, RDS(O ) 9.8mΩ
-Channel Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified)
Parameter
Symbol Min.
Typ.
Max.
Unit
Test Conditions
Drain-Source Breakdown Voltage
V(BR)DSS
100
-
- V VGS=0V, ID=250µA
Gate-Threshold Voltage
Gate-Source Leakage Current
VGS(th)
IGSS
1.4
-
- 2.4 V VDS=VGS, ID=250µA
-
±100
nA VGS= ±20V,VDS=0V
Drain-Source Leakage Current
IDSS
-
-
-1
VDS=80V, VGS=0V, TJ=25°C
uA
- 100
VDS=80V, VGS=0V, TJ=100°C
Static Drain-Source On-Resistance 3 RDS(ON)
-
-
8
10.5
9.8 VGS=10V, ID=20A
mΩ
13 VGS=4.5V, ID=20A
Transconductance
Gate Resistance
gfs - 80 - S VDS=5V, ID=10A
Rg - 1.4 - Ω VDS=VGS=0V, f =1MHz
Total Gate Charge (4.5V)
Total Gate Charge
Gate-Source Charge
- 12 -
Qg
- 24 -
nC
Qgs - 4 -
Gate-Drain Change
Qgd - 6 -
Turn-on Delay Time
Td(on)
-
6
-
Rise Time
Turn-off Delay Time
Tr - 4 -
nS
Td(off)
-
18
-
Fall Time
Tf - 3 -
Input Capacitance
Ciss - 1450 -
Output Capacitance
Coss - 273 - pF
Reverse Transfer Capacitance
Crss
-
5
-
Source-Drain Diode
Diode Forward Voltage 3
VSD -
- 1.2 V
Reverse Recovery Time
Trr - 40 - nS
Reverse Recovery Charge
Qrr - 152 - nC
Notes:
1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2. The Pulse width limited by maximum junction temperature, Pulse Width ≤300µs, Duty Cycle≤2%
3. The Pulse Test : Pulse Width ≤300µs, Duty Cycle≤2%
4. Package limit.
ID=20A
VDD=50V
VGS=10V
VDD=50V
ID=20A
VGS=10V
RG=10Ω
VGS =0V
VDS=50V
f =1MHz
IF=20A, VGS=0V
IF=20A,VR=50V,dl/dt=500A/µs
http://www.SeCoSGmbH.com/
22-Aug-2019 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 4


Part Number SPR63N10S-C
Description N-Channel MOSFET
Maker SeCoS
Total Page 4 Pages
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