SPR63N10S-C
SPR63N10S-C is N-Channel MOSFET manufactured by SeCoS Halbleitertechnologie GmbH.
DESCRIPTION
The SPR63N10S-C is the highest performance trench N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.
The SPR63N10S-C meet the Ro HS and Green Product requirement with full function reliability approved.
FEATURES
Lower Gate Charge Advanced high cell density Trench technology Green Device Available
MARKING
PR-8PP
63N10S
= Date code
PACKAGE INFORMATION
Package
PR-8PP
3K
Leader Size 13 inch
ORDER INFORMATION
Part Number
Type
SPR63N10S-C Lead (Pb)-free and Halogen-free
REF.
A B C D E F
Millimeter Min. Max.
4.9 5.1 5.7 5.9 5.95 6.2
1.27 BSC. 0.35 0.49 0.1 0.2
REF.
G H I J K L
Millimeter Min. Max.
0.8 1.0 0.254 Ref. 4.0 Ref. 3.4 Ref. 0.6 Ref. 1.4 Ref.
SD SD SD GD
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current 1 (Silicon Limited)
Continuous Drain Current 1 (Package Limited) Pulsed Drain Current 2 4
TC=25°C TC=100°C TC=25°C
ID...
