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SPRD4160-C SeCoS Dual N-Ch Enhancement Mode Power MOSFET

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Description The SPRD4160-C is the highest performance trench Dual N-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SPRD4160-C meet the RoHS and Green Product requirement with full function reliability approved. DFN5x6-8D FEATURES Advanced High Cell Density Trench Technology Super Low Gate Charge Green De...
Features Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available MARKING 4160 =Date Code PACKAGE INFORMATION Package MPQ DFN5x6-8D 3K Leader Size 13 inch REF. A B C D E F G Millimeter Min. Max. 5.70 5.80 5.90 6.10 4.80 5.00 3.61 3.96 0.06 0.20 3.38 3.78 1.10 - REF. H I J K L M N Millimeter Min. Max. 1.2...

Datasheet PDF File SPRD4160-C Datasheet - 540.80KB
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SPRD4160-C   SPRD4160-C   SPRD4160-C  



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