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SPRD4160-C - Dual N-Ch Enhancement Mode Power MOSFET

Description

The SPRD4160-C is the highest performance trench Dual N-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.

Features

  • Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available.

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Datasheet Details

Part number SPRD4160-C
Manufacturer SeCoS
File Size 540.80 KB
Description Dual N-Ch Enhancement Mode Power MOSFET
Datasheet download datasheet SPRD4160-C Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SPRD4160-C 42A, 60V, RDS(ON) 12mΩ Dual N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SPRD4160-C is the highest performance trench Dual N-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SPRD4160-C meet the RoHS and Green Product requirement with full function reliability approved. DFN5x6-8D FEATURES Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available MARKING 4160 =Date Code PACKAGE INFORMATION Package MPQ DFN5x6-8D 3K Leader Size 13 inch REF. A B C D E F G Millimeter Min. Max. 5.70 5.80 5.90 6.10 4.80 5.00 3.61 3.96 0.06 0.20 3.
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