SPRD4160-C Datasheet | SeCoS Halbleitertechnologie GmbH

Elektronische Bauelemente 42A, 60V, RDS(ON) 12mΩ Dual N-Ch Enhancement Mode Power MOSFET Ro HS pliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SPRD4160-C is the highest performance trench Dual N-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SPRD4160-C meet the Ro HS and Green Product requirement with full function reliability approved. DFN5x6-8D Features Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available MARKING =Date Code PACKAGE INFORMATION Package DFN5x6-8D 3K Leader Size 13 inch REF. A B C D E F G Millimeter Min. Max. 5.70 5.80 5.90 6.10 4.80 5.00 3.61 3.96 0.06 0.20 3.38 3.78 - REF. H I J K L M N Millimeter Min. Max. 1.27 BSC. 3.61 3.96 0.51 0.71 0.41 0.61 0.33 0.51 0.20 0.30 0.90...