SPRD4511-C Datasheet | SeCoS Halbleitertechnologie GmbH

Elektronische Bauelemente -Ch: 11A, 100V, RDS(O ) 150mΩ P-Ch: -9A, -100V, RDS(O ) 210mΩ & P-Ch Enhancement Mode Power MOSFET RoHS pliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SPRD4511-C is the highest performance trench N-Ch and P-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SPRD4511-C meet the RoHS and Green Product requirement with full function reliability approved. DFN5x6-8D Features Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available MARKING =Date Code PACKAGE INFORMATION Package...