SPRD4511-C
SPRD4511-C is N & P-Ch Enhancement Mode Power MOSFET manufactured by SeCoS Halbleitertechnologie GmbH.
DESCRIPTION
The SPRD4511-C is the highest performance trench N-Ch and P-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.
The SPRD4511-C meet the Ro HS and Green Product requirement with full function reliability approved.
DFN5x6-8D
FEATURES
Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available
MARKING
=Date Code
PACKAGE INFORMATION
Package
DFN5x6-8D
3K
Leader Size 13 inch
REF.
A B C D E F G
Millimeter
Min. Max.
3.61 3.96
0.06 0.20
3.38 3.78
- REF.
H I J K L M N
Millimeter
Min. Max.
1.27 BSC.
3.61 3.96
0.51 0.71
0.41 0.61
0.33...
