SPRD4160-C Datasheet | SeCoS Halbleitertechnologie GmbH

Elektronische Bauelemente 42A, 60V, RDS(ON) 12mΩ Dual N-Ch Enhancement Mode Power MOSFET RoHS pliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SPRD4160-C is the highest performance trench Dual N-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SPRD4160-C meet the RoHS and Green Product requirement with full function reliability approved. DFN5x6-8D Features Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available MARKING =Date Code PACKAGE INFORMATION Package DFN5x6-8D 3K Leader Size 13...