SPRD4160-C Datasheet Dual N-Ch Enhancement Mode Power MOSFET

Manufacturer: SeCoS Halbleitertechnologie GmbH

SPRD4160-C dual n-ch enhancement mode power mosfet by SeCoS Halbleitertechnologie GmbH - Datasheet Preview

Datasheet Details

Part number	SPRD4160-C
Manufacturer	SeCoS Halbleitertechnologie GmbH
File Size	540.80 KB
Description	Dual N-Ch Enhancement Mode Power MOSFET
Datasheet	SPRD4160-C Datasheet

General Description

The SPRD4160-C is the highest performance trench Dual N-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.

The SPRD4160-C meet the RoHS and Green Product requirement with full function reliability approved.

DFN5x6-8D

Overview

Elektronische Bauelemente SPRD4160-C 42A, 60V, RDS(ON) 12mΩ Dual N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen &.

Key Features

Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available.

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