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SS8050W Datasheet Preview

SS8050W Datasheet

NPN Silicon General Purpose Transistor

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Elektronische Bauelemente
SS8050W
NPN Silicon
General Purpose Transistor
RoHS Compliant Product
FEATURES
Power dissipation
PCM : 0.2 W
Collector Current
ICM : 1.5 A
Collector-base voltage
V(BR)CBO : 40 V
Operating & storage junction temperature
Tj, Tstg : - 55OC ~ + 150O C
V
1
2
3
A
L
3
Top View
12
G
Collector
3
1
Base
2
Emitter
BS
C
D
HK
J
SOT-323
Dim Min Max
A 1.800 2.200
B 1.150 1.350
C 0.800 1.000
D 0.300 0.400
G 1.200 1.400
H 0.000 0.100
J 0.100 0.250
K 0.350 0.500
L 0.590 0.720
S 2.000 2.400
V 0.280 0.420
All Dimension in mm
ELECTRICAL CHARACTERISTICS ( Tamp.=25OC unless otherwise specified)
Parameter
Symbol
Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
V(BR)CBO
V(BR)CEO
Ic= 100 A IE=0
Ic= 0.1mA IB=0
40
25
V
V
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
V(BR)EBO
ICBO
ICEO
IE=100 A IC=0
VCB=40 V , IE=0
VCE=20V , IB=0
5
V
0.1 A
0.1 A
Emitter cut-off current
IEBO VEB= 5V , IC=0
0.1 A
DC current gain
HFE(1)
HFE(2)
VCE=1V, IC= 50m A
VCE=1V, IC=500mA
120
40
350
Collector-emitter saturation voltage
VCE(sat) IC=500 mA, IB= 50m A
0.5 V
Base-emitter saturation voltage
Transition frequency
CLASSIFICATION OF hFE(1)
Rank
Range
Marking : Y1
VBE(sat)
fT
IC=500 mA, IB= 50m A
VCE=6V, IC= 20mA
f=30MHz
L
120-200
100
H
200-350
1.2 V
MHz
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 1 of 2




SeCoS

SS8050W Datasheet Preview

SS8050W Datasheet

NPN Silicon General Purpose Transistor

No Preview Available !

Elektronische Bauelemente
SS8050W
NPN Silicon
General Purpose Transistor
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 2


Part Number SS8050W
Description NPN Silicon General Purpose Transistor
Maker SeCoS
Total Page 2 Pages
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