Datasheet Details
| Part number | SS8050 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 54.67 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | SS8050-INCHANGE.pdf |
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Overview: INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product.
| Part number | SS8050 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 54.67 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | SS8050-INCHANGE.pdf |
|
|
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·Low Saturation Voltage- : VCE(sat)= 0.5V(Max)@ IC =0.8A APPLICATIONS ·Designed for high-speed switching and Amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO VCEO VEBO Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature VALUE 40 25 5 1.5 300 150 -55~150 UNIT V V V A mW ℃ ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification SS8050 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-base breakdown voltage IC=100μA, IE=0 V(BR)CEO Collector-emitter breakdown voltage IC=0.1mA , IB=0 V(BR)EBO Emitter-base breakdown voltage IE= 100μA, IC=0 VCE(sat) Collector-Emitter Saturation Voltage IC=800mA;
IB= 80mA VBE(sat) base-emitter saturation voltage IC= 800mA;
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