Inchange Semiconductor SS8050
Silicon NPN Power Transistor
| Part No. | SS8050 |
|---|---|
| Datasheet | SS8050 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Low Saturation Voltage- : VCE(sat)= 0.5V(Max)@ IC =0.8AAPPLICATIONS
●Designed for high-speed switching and Amplifier applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VCBO VCEO VEBO Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature VALUE 40 25 5 1.5 300 150 -55~150 UNIT V V V A mW ℃ ℃ isc website： 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification SS8050ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-base breakdown voltage IC=100μA, IE=0 V(BR)CEO Collector-emitter breakdown voltage IC=0.1mA , IB=0 V(BR)EBO Emitter-base breakdown voltage IE= 100μA, IC=0 VCE(sat) Collector-Emitter Saturation Voltage IC=800mA; IB= 80mA VBE(sat) base-emitter saturation voltage IC= 800mA; IB=80mA ICBO collector c...