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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
SOT-23 Plastic-Encapsulate Transistors
SOT¡ª 23
SS8050LT1
FEATURES
TRANSISTOR£¨NPN £©
1. BASE 2. EMITTER 3. COLLECTOR
Power dissipation PCM : 0.3 W£¨ Tamb=25¡æ£© Collector current ICM : 1.5 A Collector-base voltage V(BR)CBO : 40 V Operating and storage junction temperature range T J £¬ T stg: -55¡æto +150¡æ
Unit : mm
ELECTRICAL CHARACTERISTICS£¨ Tamb=25¡æ
Parameter Collector-base breakdown voltage
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unless
Test
otherwise
specified£©
MIN 40 25 5 0.1 0.1 0.1 120 40 0.5 1.2 100 V V MHz 350 TYP MAX UNIT V V V ¦Ì A ¦Ì A ¦Ì A
Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(1)
conditions
Ic= 100¦Ì A£¬ IE=0 Ic= 0.