SS8050LT1 Datasheet | Elite

SS8050LT1 NPN Epitaxial Silicon Transistor 1.25W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION SOT-23 Collector-Emitter Voltage: VCEO= 25V Collector Dissipation: PC= 625m W Absolute Maximum Ratings (TA=25o C) Characteristic Symbol Rating Unit Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PC TJ TSTG 40 25 5 1500 625 150 -65~+150 V m A m W o C o C Tolerance : 0.1mm Dimensions (Unit : mm) 1. Emitter 2. Base 3. Collector Electrical Characteristics (TA=25o C) Characteristic Symbol Test Conditions Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency BVCBO BVCEO BVEBO ICBO ICEO IEBO h FE(1) h FE(2) VCE(sat) VBE(sat) VBEF f T IC= 100µA, IE= 0 IC= 0.1m A, IB= 0 IE= 100µA, IC= 0 VCB= 40V, IE= 0 VCE= 20V, IB= 0 VEB= 5V, IC= 0m A VCE= 1V, IC= 50m A VCE= 1V, IC= 500m A IC= 500m A, IB= 50m A IC= 500m A, IB= 50m A IE= 100m A VCE= 6V, IC= 20m A f= 30MHz Min Max Unit 40 V 25 V 6V 0.1 0.1 0.1 120 350 µA µA µA 0.5 V 1.2 V 1.6 V 100 MHz h FE(1) CLASSIFICATION Classification L h...