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SS8050LT1
NPN General Purpose Transistors
P b Lead(Pb)-Free
1 2 3
SOT-23
V CEO Value 25 40 6.0 1500
625 5.0 200
www.DataSheet4U.com
SS8050LT1=Y1
0.1 100 100
25 40 6.0
)
E=20 Vdc, I E= 0 40 5.0
O
0.1 0.1 0.1
u
u u
WEITRON
http://www.weitron.com.tw
SS8050LT1
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
Characteristics Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain (IC=100 mAdc, VCE=1.0 Vdc) (IC=800 mAdc, VCE=1.0 Vdc) Collector-Emitter Saturation Voltage (IC=800 mAdc, IB=80mAdc) Base-Emitter Saturation Voltage (IC=800 mAdc, IB=80mAdc) hFE (1) hFE (2) VCE(sat) VBE(sat)
120 40 350
0.5 1.
SS8050LT1 Datasheet
