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General Purpose Transistor
SS8050-G (NPN)
RoHS Device
Diagram:
1 : BASE 2 : EMITTER 3 : COLLECTOR
1 Base
Collector 3
2 Emitter
Maximum Ratings (at TA=25°C unless otherwise noted)
Parameter Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage
Collector current Collector power dissipation Thermal resistance from junction to ambient Junction temperature Storage temperature
Symbol VCBO VCEO VEBO IC PC
RθJA
TJ Tstg
Value 40 25 5 1.5 300
417
150 -55~+150
Unit V V V A mW
°C/W
°C °C
SOT-23
0.055(1.40) 0.047(1.20)
0.041(1.05) 0.035(0.90)
0.118(3.00) 0.110(2.80)
3
12 0.079(2.00) 0.071(1.80)
0.006(0.15) 0.003(0.08)
0.100(2.55) 0.089(2.25)
0.020(0.50) 0.012(0.30)
0.004(0.10) max
0.020(0.50) 0.012(0.
SS8050-G Datasheet
