SeCoS Halbleitertechnologie GmbH SS8050
NPN Silicon Transistor
| Part No. | SS8050 |
|---|---|
| Datasheet | SS8050 Download |
| Manufacturer |  SeCoS Halbleitertechnologie GmbH |
| Description | NPN Silicon Transistor |
| Buy | Stock & Price |
FEATURES
● Complimentary to SS8550● Power Dissipation PCM : 0.3W
● Collector Current ICM : 1.5A
● Collector - Base Voltage V(BR)CBO : 40V
● Operating & Storage junction temperature TJ, TSTG : -55℃ ~ +150℃ MARKING : Y1 Base
MAXIMUM RATINGS
(at Ta = 25°C unless otherwise specified) PARAMETER Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Power Dissapation Junction, Storage Temperature SYMBOL VCBO VCEO VEBO IC PC TJ, TSTG Collector● Emitter A L 3 Top View CB 12 KE 1 D F GH 3 2 J REF. A B C D E F Millimeter Min. Max. 2.70 3.04 2.10 2.80 1.20 1.60 0.89 1.40 1.78 2.04 0.30 0.50 REF. G H J K L Millimeter Min. Max. - 0.18 0.40 0.60 0.08 0.20 0.6 REF. 0.85 1.15 RATINGS 40 25 5 1.5 0.3 150, -55~150 UNIT V V V A W ℃
ELECTRICAL CHARACTERISTICS
(at Ta = 25°C unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current C...