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SS8050 - NPN Silicon Transistor

Key Features

  • Complimentary to SS8550.
  • Power Dissipation PCM : 0.3W.
  • Collector Current ICM : 1.5A.
  • Collector - Base Voltage V(BR)CBO : 40V.
  • Operating & Storage junction temperature TJ, TSTG : -55℃ ~ +150℃.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SS8050 NPN Silicon General Purpose Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES  Complimentary to SS8550  Power Dissipation PCM : 0.3W  Collector Current ICM : 1.5A  Collector - Base Voltage V(BR)CBO : 40V  Operating & Storage junction temperature TJ, TSTG : -55℃ ~ +150℃ MARKING : Y1  Base MAXIMUM RATINGS (at Ta = 25°C unless otherwise specified) PARAMETER Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Power Dissapation Junction, Storage Temperature SYMBOL VCBO VCEO VEBO IC PC TJ, TSTG Collector   Emitter A L 3 Top View CB 12 KE 1 D F GH 3 2 J REF. A B C D E F Millimeter Min. Max. 2.70 3.04 2.10 2.80 1.20 1.60 0.