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SS8050W - NPN Silicon Transistor

Key Features

  • Power dissipation PCM : 0.2 W Collector Current ICM : 1.5 A Collector-base voltage V(BR)CBO : 40 V Operating & storage junction temperature Tj, Tstg : - 55OC ~ + 150O C V 1 2 3 A L 3 Top View 12 G Collector 3 1 Base 2 Emitter BS C D HK J SOT-323 Dim Min Max A 1.800 2.200 B 1.150 1.350 C 0.800 1.000 D 0.300 0.400 G 1.200 1.400 H 0.000 0.100 J 0.100 0.250 K 0.350 0.500 L 0.590 0.720 S 2.000 2.400 V 0.280 0.420 All Dimension in mm.

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Full PDF Text Transcription (Reference)

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Elektronische Bauelemente SS8050W NPN Silicon General Purpose Transistor RoHS Compliant Product FEATURES Power dissipation PCM : 0.2 W Collector Current ICM : 1.5 A Collector-base voltage V(BR)CBO : 40 V Operating & storage junction temperature Tj, Tstg : - 55OC ~ + 150O C V 1 2 3 A L 3 Top View 12 G Collector 3 1 Base 2 Emitter BS C D HK J SOT-323 Dim Min Max A 1.800 2.200 B 1.150 1.350 C 0.800 1.000 D 0.300 0.400 G 1.200 1.400 H 0.000 0.100 J 0.100 0.250 K 0.350 0.500 L 0.590 0.720 S 2.000 2.400 V 0.280 0.420 All Dimension in mm ELECTRICAL CHARACTERISTICS ( Tamp.=25OC unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage Collector-emitter breakdown voltage V(BR)CBO V(BR)CEO Ic= 100 A IE=0 Ic= 0.