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SeCoS

SS8550W Datasheet Preview

SS8550W Datasheet

PNP Silicon General Purpose Transistor

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Elektronische Bauelemente
SS8550W
PNP Silicon
General Purpose Transistor
RoHS Compliant Product
FEATURES
Power dissipation
PCM : 0.2 W
Collector Current
ICM : -1.5 A
Collector-base voltage
V(BR)CBO : - 40 V
Operating & storage junction temperature
Tj, Tstg : - 55OC ~ + 150O C
V
1
2
3
A
L
3
Top View
12
G
Collector
3
1
Base
2
Emitter
BS
Marking : Y2
C
D
HK
J
SOT-323
Dim Min Max
A 1.800 2.200
B 1.150 1.350
C 0.800 1.000
D 0.300 0.400
G 1.200 1.400
H 0.000 0.100
J 0.100 0.250
K 0.350 0.500
L 0.590 0.720
S 2.000 2.400
V 0.280 0.420
All Dimension in mm
ELECTRICAL CHARACTERISTICS ( Tamp.=25OC unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
output capacitance
Symbol
Test conditions
MIN
V(BR)CBO
V(BR)CEO
Ic= 100 A IE=0
Ic=-0.1mA IB=0
-40
-25
V(BR)EBO
IE=-100 A IC=0
-5
ICBO VCB=-40 V , IE=0
ICEO VCE=-20V , IB=0
IEBO VEB= -5V , IC=0
HFE(1)
VCE=-1V, IC=-100m A
120
HFE(2)
VCE=-1V, IC=-800mA
40
VCE(sat) IC=-800 mA, IB= -80m A
VBE(sat)
fT
&RE
IC=-800 mA, IB= -80m A
VCE=-10V, IC=-50mA
f=30MHz
(VCB=-10V,IE=0,f=1MHz)
100
TYP MAX UNIT
V
V
V
-0.1 A
-0.1 A
-0.1 A
350
-0.5 V
-1.2 V
MHz
20 S)
CLASSIFICATION OF hFE(1)
Rank
Range
L
120-200
H
200-350
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 1 of 2




SeCoS

SS8550W Datasheet Preview

SS8550W Datasheet

PNP Silicon General Purpose Transistor

No Preview Available !

Elektronische Bauelemente
SS8550W
PNP Silicon
General Purpose Transistor
Typical Characteristics
-0.5
IB=-4.0mA
-0.4 IB=-3.5mA
IB=-3.0mA
-0.3 IB=-2.5mA
IB=-2.0mA
-0.2 IB=-1.5mA
IB=-1.0mA
-0.1
IB=-0.5mA
-0.4 -0.8 -1.2 -1.6 -2.0
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
-10000
IC=10IB
-1000
-100
VBE(sat)
VCE(sat)
-10
-0.1
-1 -10 -100
IC[mA], COLLECTOR CURRENT
-1000
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
100
f=1MHz
IE=0
10
1000
100
VCE = -1V
10
1
-0.1
-1
-10 -100
IC[mA], COLLECTOR CURRENT
Figure 2. DC current Gain
-1000
-100
VCE = -1V
-10
-1
-0.1
-0.0
-0.2 -0.4 -0.6 -0.8 -1.0
VBE[V], BASE-EMITTER VOLTAGE
-1.2
Figure 4. Base-Emitter On Voltage
1000
VCE=-10V
100
1
-1
-10
-100
-1000
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 5. Collector Output Capacitance
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
10
-1
-10
-100
-1000
IC[mA], COLLECTOR CURRENT
Figure 6. Current Gain Bandwidth Product
Any changing of specification will not be informed individual
Page 2 of 2


Part Number SS8550W
Description PNP Silicon General Purpose Transistor
Maker SeCoS
Total Page 2 Pages
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