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SS8550
Plastic-Encapsulate Transistors PNP Silicon
2 BASE 1 EMITTER
COLLECTOR 3
TO-92
1. EMITTER 2. BASE 3. COLLECTOR
1
2
3
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation TA=25 C Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC PD Tj Tstg SS8550 -25 -40 -5.0 -1.5 1.0 150 -55 to +150 Unit Vdc Vdc Vdc Adc W C C
DEVICE MARKING SS8550=SS8550D
ELECTRICAL CHARACTERISTICS
Characteristics Collector-Emitter Breakdown Voltage (1) (IC= -0.