SS8550 Datasheet PDF

ABSOLUTE MAXIMUM RATINGS

(Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation TA=25 C Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC PD Tj Tstg SS8550 -25 -40 -5.0 -1.5 1.0 150 -55 to +150 Unit Vdc Vdc Vdc Adc W C C DEVICE MARKING SS8550=SS8550D

ELECTRICAL CHARACTERISTICS

Characteristics Collector-Emitter Breakdown Voltage (1) (IC= -0.1 mAdc, IB=0) Collector-Base Breakdown Voltage (IC= -100 uAdc, IE=0) Emitter-Base Breakdown Voltage (IE= -100 uAdc, IC=0) Collector Cutoff Current (VCB= -40 Vdc, IE=0 Vdc) Emitter Cutoff Current(VEB = -5 Vdc, I C =0 Vdc) 1. Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0% Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO I EBO Min -25 -40 -5.0 Max -0.1 -0.1 Unit Vdc Vdc Vdc uAdc uAdc WEITRON SS8550

ELECTRICAL CHARACTERISTICS

(TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min TYP Max Unit ON CHARACTERISTICS DC Current Gain (IC= -100 mAdc, VCE=-1.0...