The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
TIGER ELECTRONIC CO.,LTD
TO-92 Plastic-Encapsulate Transistors
SS8550 TRANSISTOR (PNP)
TO-92
FEATURES Power dissipation PC : 1 W (Ta=25 ℃)
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value Unit
VCBO
Collector-Base Voltage
-40 V
VCEO
Collector-Emitter Voltage
-25 V
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current-Continuous -1.5 A
Tj Junction Temperature
150 ℃
Tstg Storage Temperature
-55-150
℃
1. EMITTER 2. BASE 3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
Collector-base breakdown voltage
V(BR)CBO IC=-100uA, IE=0
Collector-emitter breakdown voltage
V(BR)CEO IC=-0.