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SS8550 - PNP Transistor

Key Features

  • Power dissipation PC : 1 W (Ta=25 ℃).

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Datasheet Details

Part number SS8550
Manufacturer TGS
File Size 589.99 KB
Description PNP Transistor
Datasheet download datasheet SS8550 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TIGER ELECTRONIC CO.,LTD TO-92 Plastic-Encapsulate Transistors SS8550 TRANSISTOR (PNP) TO-92 FEATURES Power dissipation PC : 1 W (Ta=25 ℃) MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.5 A Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ 1. EMITTER 2. BASE 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage V(BR)CBO IC=-100uA, IE=0 Collector-emitter breakdown voltage V(BR)CEO IC=-0.