TGS SS8550
PNP Transistor
| Part No. | SS8550 |
|---|---|
| Datasheet | SS8550 Download |
| Manufacturer |  TGS |
| Description | PNP Transistor |
| Buy | Stock & Price |
FEATURES
Power dissipation PC : 1 W (Ta=25 ℃)MAXIMUM RATINGS
(Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.5 A Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ 1. EMITTER 2. BASE 3. COLLECTORELECTRICAL CHARACTERISTICS
(Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage V(BR)CBO IC=-100uA, IE=0 Collector-emitter breakdown voltage V(BR)CEO IC=-0.1mA, IB=0 Emitter-base breakdown voltage V(BR)EBO IE=-100μA, IC=0 Collector cut-off current ICBO VCB=-40V, IE=0 Emitter cut-off current ICEO VCE=-20V, IE=0 Emitter cut-off current IEBO VEB=-5V, IC=0 DC current gain hFE(1) hFE(2) VCE=-1V, IC=-100mA VCE=-1V, IC=-800mA Collector-emitter saturation voltage VCE(sat) IC=-800mA, IB=-80mA Base-emitter saturation voltage VBE(sat) IC=-800mA, IB=-80mA Base-emitter voltage VBE(on) VCE=-1V, IC=...