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SS8550 - PNP Epitaxial Silicon Transistor

General Description

TO

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Key Features

  • 2 W Output Amplifier of Portable Radios in Class B Push.
  • Pull Operation.
  • Complementary to SS8050.
  • Collector Current: IC = 1.5 A.
  • These Devices are Pb.
  • Free, Halogen Free/BFR Free and are RoHS Compliant.

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Datasheet Details

Part number SS8550
Manufacturer onsemi
File Size 162.08 KB
Description PNP Epitaxial Silicon Transistor
Datasheet download datasheet SS8550 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PNP Epitaxial Silicon Transistor SS8550 Features • 2 W Output Amplifier of Portable Radios in Class B Push−Pull Operation • Complementary to SS8050 • Collector Current: IC = 1.5 A • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Value Unit Collector−Base Voltage VCBO −40 V Collector−Emitter Voltage VCEO −25 V Emitter−Base Voltage VEBO −6 V Collector Current IC −1.5 A Junction Temperature TJ 150 °C Storage Temperature TSTG −65 to 150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.