SS8550 Datasheet and Specifications PDF

The SS8550 is a PNP Epitaxial Silicon Transistor.

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Part NumberSS8550 Datasheet
Manufactureronsemi
Overview TO−92 3 4.825X4.76 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COP.
* 2 W Output Amplifier of Portable Radios in Class B Push
*Pull Operation
* Complementary to SS8050
* Collector Current: IC = 1.5 A
* These Devices are Pb
*Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Value Unit C.
Part NumberSS8550 Datasheet
DescriptionPNP Transistor
ManufacturerGalaxy Microelectronics
Overview Silicon Epitaxial Planar Transistor EATURES  Collector Current.(IC= 1.5A)  Complementary To SS8050. Pb Lead-free  Collector Dissipation: PC=0.3W (TC=25°C) APPLICATIONS  High Collector Current.. itter-base breakdown voltage V(BR)EBO IE=-100μA,IC=0 -6 V Collector cut-off current Collector cut-off current Emitter cut-off current ICBO VCB=-35V,IE=0 ICEO VCE=-20V,IB=0 IEBO VEB=-6V,IC=0 -0.1 μA -0.1 μA -0.1 μA DC current gain VCE=-1V,IC=-100mA 120 400 hFE VCE=-1V,IC=-800mA 40 8.
Part NumberSS8550 Datasheet
DescriptionPNP Transistor
ManufacturerWeitron Technology
Overview SS8550 Plastic-Encapsulate Transistors PNP Silicon 2 BASE 1 EMITTER COLLECTOR 3 TO-92 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collec. SS8550 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min TYP Max Unit ON CHARACTERISTICS DC Current Gain (IC= -100 mAdc, VCE=-1.0 Vdc) hFE(1) hFE(2) VCE(sat) VBE(sat) fT 85 40 100 - 400 -0.5 Vdc DC Current Gain (IC= -800.
Part NumberSS8550 Datasheet
DescriptionPNP Transistor
ManufacturerTGS
Overview TIGER ELECTRONIC CO.,LTD TO-92 Plastic-Encapsulate Transistors SS8550 TRANSISTOR (PNP) TO-92 FEATURES Power dissipation PC : 1 W (Ta=25 ℃) MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol . Power dissipation PC : 1 W (Ta=25 ℃) MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.5 A Tj Junction Temperature 150 ℃ .