SS8550LT1 Datasheet | Weitron Technology

PNP General Purpose Transistors P b Lead(Pb)-Free VCEO Value -25 -40 -6.0 -1500 1 2 SOT-23 SS8550LT1=Y2 -0.1 -100 -100 E=-20Vdc,IE= 0 ) -40 -5.0 625 5.0 200 -25 -40 -6.0 O -0.1 u -0.1 u -0.1 u WEITRON http://.weitron..tw ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min ON CHARACTERISTICS DC Current Gain (IC=-100 m Adc, VCE=1.0 Vdc) (IC=-800 m Adc, VCE=1.0 Vdc) Collector-Emitter Saturation Voltage (IC=-800 m Adc, IB=-80m Adc) Base-Emitter Saturation Voltage (IC=-800 m Adc, IB=-80m Adc) h FE (1) h FE (2) VCE(sat) VBE(sat) 120 40 - - Max Unit 350 -- -0.5 Vdc -1.2 Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product (IC=-50 m Adc, VCE=-10 Vdc, f=30MHz) f T 100 - MHz - CLASSIFICATION OF h FE(1) Rank Range 120-200 H 200-350 WEITRON http://.weitron..tw IC[m A], COLLECTOR CURRENT VBE(s at), VCE(s at)[V], SATURATION...