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PNP General Purpose Transistors
P b Lead(Pb)-Free
VCEO
SS8550LT1
Value
-25 -40 -6.0 -1500
3
1 2
SOT-23
SS8550LT1=Y2
-0.1 -100 -100 E=-20Vdc,IE= 0 ) -40 -5.0
625 5.0 200
-25 -40 -6.0 O -0.1 u
-0.1 u -0.1 u
WEITRON
http://www.weitron.com.tw
SS8550LT1
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
Characteristics
Symbol
Min
ON CHARACTERISTICS
DC Current Gain (IC=-100 mAdc, VCE=1.0 Vdc) (IC=-800 mAdc, VCE=1.0 Vdc)
Collector-Emitter Saturation Voltage (IC=-800 mAdc, IB=-80mAdc)
Base-Emitter Saturation Voltage (IC=-800 mAdc, IB=-80mAdc)
hFE (1) hFE (2) VCE(sat)
VBE(sat)
120 40
-
-
Max Unit
350 --
-0.5 Vdc -1.
SS8550LT1 Datasheet
