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SS8550 - PNP Transistor

Key Features

  • z Power dissipation PCM : 0.3 W 1 Base z Collector Current ICM : - 1.5 A z Collector-base voltage V(BR)CBO : - 40 V z Operating & storage junction temperature TJ, TSTG : - 55°C ~ + 150°C Collector 3 2 Emitter 1 Base 3 Collector 2 Emitter A L 3 Top View 12 VG BS D K J C H SOT-23 Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in mm.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SS8550 PNP Silicon General Purpose Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES z Power dissipation PCM : 0.3 W 1 Base z Collector Current ICM : - 1.5 A z Collector-base voltage V(BR)CBO : - 40 V z Operating & storage junction temperature TJ, TSTG : - 55°C ~ + 150°C Collector 3 2 Emitter 1 Base 3 Collector 2 Emitter A L 3 Top View 12 VG BS D K J C H SOT-23 Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in mm ELECTRICAL CHARACTERISTICS at Ta = 25°C Symbol BVCBO BVCEO BVEBO ICBO ICEO IEBO VCE(sat) VBE(sat)1 *hFE1 *hFE2 fT COB Min. -40 -25 -5 120 40 100 - Typ. - Max.