SS8550
SS8550 is PNP Transistor manufactured by SeCoS Halbleitertechnologie GmbH.
FEATURES z Power dissipation PCM : 0.3 W
1 Base z Collector Current
ICM :
- 1.5 A z Collector-base voltage
V(BR)CBO :
- 40 V z Operating & storage junction temperature
TJ, TSTG :
- 55°C ~ + 150°C
Collector 3
2 Emitter
1 Base
3 Collector 2
Emitter
Top View
BS D
SOT-23 Dim Min Max
A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in mm
ELECTRICAL CHARACTERISTICS at Ta = 25°C
Symbol
BVCBO BVCEO BVEBO ICBO ICEO IEBO VCE(sat) VBE(sat)1
- h FE1
- h FE2 f T COB
Min.
-40 -25 -5
120 40 100
- Typ.
- Max.
-0.1 -0.1 -0.1 0.5 1.2 350 20
Unit
V V V μA μA μA V V MHz p F
Test Conditions
Ic = 100μA, IE = 0 Ic = -0.1m A, IB = 0 IE = -100μA, IC = 0 VCB = -40 V, IE = 0 VCE = -20V, IB = 0 VEB = -5V, IC = 0 IC = -800 m A, IB = -80m A IC = -800 m A, IB = -80m A VCE= -1V, IC=-100m A VCE = -1V, IC = -800m A VCE = -10V, IC = -50m A, f = 30MHz VCB= -10V, IE=0, f=1MHz
CLASSIFICATION OF h FE(1)
Rank
Range...
