SS8550W
SS8550W is PNP Transistor manufactured by SeCoS Halbleitertechnologie GmbH.
FEATURES
Power dissipation PCM : 0.2 W
Collector Current ICM : -1.5 A
Collector-base voltage V(BR)CBO :
- 40 V
Operating & storage junction temperature Tj, Tstg :
- 55OC ~ + 150O C
1 2
Top View
Collector 3
1 Base
2 Emitter
Marking : Y2
SOT-323 Dim Min Max
A 1.800 2.200 B 1.150 1.350 C 0.800 1.000 D 0.300 0.400 G 1.200 1.400 H 0.000 0.100 J 0.100 0.250 K 0.350 0.500 L 0.590 0.720 S 2.000 2.400 V 0.280 0.420 All Dimension in mm
ELECTRICAL CHARACTERISTICS ( Tamp.=25OC unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current
DC current gain
Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency output capacitance
Symbol
Test conditions
V(BR)CBO...
