| Title | |
| Description | The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching a... |
| Features |
Robust high voltage termination Avalanche energy specified Source-to-drain diode recovery time comparable to a discrete fast recovery diode Diode is characterized for the use in bridge circuits IDSS and VDS are specified at the elevated temperature PACKAGE INFORMATION Package MPQ Leader Size TO-252 2.5K 13 inch Drain ORDER INF... |
| Datasheet |
 SSD02N60J-C Datasheet - 547.65KB |
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