SSD02N60J-C Datasheet (PDF) Download
SeCoS Halbleitertechnologie GmbH
SSD02N60J-C

Description

The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time.

Key Features

  • Robust high voltage termination
  • Avalanche energy specified
  • Source-to-drain diode recovery time parable to a discrete fast recovery diode
  • Diode is characterized for the use in bridge circuits