SSD02N60J-C - N-Ch Enhancement Mode Power MOSFET

SeCoS Halbleitertechnologie GmbH

Datasheet Details

Part number	SSD02N60J-C
Manufacturer	SeCoS Halbleitertechnologie GmbH
File Size	547.65 KB
Description	N-Ch Enhancement Mode Power MOSFET
Datasheet	SSD02N60J-C Datasheet

General Description

The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time.

In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes.

The new energy efficient design also offers a drain-to-source diode with a fast recovery time.

Overview

Elektronische Bauelemente SSD02N60J-C 2A, 600V, RDS(ON) 4.4Ω N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen.

Key Features

Robust high voltage termination.
Avalanche energy specified.
Source-to-drain diode recovery time comparable to a discrete fast recovery diode.
Diode is characterized for the use in bridge circuits.
IDSS and VDS are specified at the elevated temperature.

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