SSD02N60SL Datasheet | SeCoS Halbleitertechnologie GmbH

Elektronische Bauelemente 2A , 600V , RDS(ON) 4.2Ω N-Ch Enhancement Mode Power MOSFET RoHS pliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSD02N60SL is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications . TO-252 Features Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available Gate Drain Source A BC K HF MJ REF. Millimeter Min. Max. REF. Millimeter Min. Max. A 6.35 6.90 J 2.30 REF. B 4.95 5.50 K 0.64...