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SSD02N60SL Datasheet N-channel MOSFET

Manufacturer: SeCoS Halbleitertechnologie GmbH

Overview: Elektronische Bauelemente SSD02N60SL 2A , 600V , RDS(ON) 4.2Ω N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen.

General Description

The SSD02N60SL is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications .

TO-252

Key Features

  • Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available 1 Gate 2 Drain 3 Source A BC D GE K HF MJ N O P REF. Millimeter Min. Max. REF. Millimeter Min. Max. A 6.35 6.90 J 2.30 REF. B 4.95 5.50 K 0.64 1.14 C 2.10 2.50 M 0.50 1.14 D 0.43 0.9 N 1.3 1.8 E 6.0 7.5 O 0 0.13 F 2.80 REF P 0.58REF. G 5.40 6.40 H 0.60 1.20.

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